TPN22006NH,LQ

TPN22006NH,LQ

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Manufacturer Part TPN22006NH,LQ
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 60V 9A 8TSON
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet TPN22006NH,LQ PDF

Availability

InStock 993
UnitPrice $ 0.91000

TPN22006NH,LQ Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

TPN22006NH,LQ Specifications

Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6.5V, 10V
Rds On (Max) @ Id, Vgs:22mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 30 V
FET Feature:-
Power Dissipation (Max):700mW (Ta), 18W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN

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